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There are several components to the effect of length on the hot-carrier effect, each of which plays a role in the sensitivity of the transistor being stressed The most obvious is that the lateral field is intimately linked to length-keeping the drain voltage constant increases the lateral field, increasing the damage for a given stress 75 time Thus, the shorter the effective length of the transistor, the greater the damage This has been discussed previously The second effect arises due to the length of the damage region It has been shown that the length of the damage region, 1, is independent of the effective length of the transistor Thus, even if transistors of different lengths were stressed under the same field conditions-with drain and gate voltages corresponding to the same lateral field-decreased lifetime for the shorter channel length devices suffering the same amount of damage 75 would result.

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Third, transistors that are stressed in the pass-transistor mode (drain and source are interchanged during the stress) suffer damage at both ends of the channel In n-channel transistors, the decrease in lifetime can be as much as an order of magnitude shorter in the transistor stressed at both source and drain ends than in a device stressed only at the drain end76 The case of the p-MOS transistor stressed under electron-injection conditions is more marked As the transistor effective length decreases, the damage size becomes a bigger and bigger fraction of the transistor length Stressing at the source and drain ends under hot-electron injection accentuates the short-channel effect, resulting in a greatly decreased lifetime for devices suffering damage at both source and drain edges The lifetimes of such transistors are reduced by at least two orders of magnitude.

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38 Furthermore, when the damage length I approaches half the length of the transistor, the trapping in the transistors stressed at both junctions can no longer be considered localized, and the Id-Vg characteristics shift from the behavior seen in Figure 610a to that of Figure 610b In this case, the damage is no longer dominated by transconductance shifts, but by threshold voltage changes, which become the predominant degradation effect Finally, as gate lengths are reduced to the <100-nm range, velocity overshoot becomes increasingly important Carrier overshoot arises when the high-field region of the channel approaches the mean-free-path length of the electrons and holes (510 nm)77 At these dimensions, the carriers pass through the high-field region without suffering a collision and are consequently not injected into the oxide (nonstationary transport regime) It would be expected that transistors in this regime would suffer less hot-carrier damage.

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It has been seen that very short-length transistors show less impact-ionized substrate current, 78 but definitive data showing decreased hot-carrier damage have yet to be published 662 Drain Engineering.

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